GREENSBORO, NC – May 5, 2021 – Qorvo® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today announced financial results for the Company's fiscal 2021 fourth quarter ended April 3, 2021. On a GAAP basis, revenue for Qorvo's fiscal 2021 fourth quarter was $1.073 billion, gross margin was 49.3%, …
به خواندن ادامه دهیدQorvo's UJ3C120070K4S is a 1200 V, 70 mohm Gen 3 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows for a true "drop-in replacement" to Si IGBTs, Si FETs, SiC …
به خواندن ادامه دهیدOne such game-changer is the use of wide band-gap materials like silicon carbide (SiC) and gallium nitride (GaN), which offer better power conversion efficiency and smaller size than traditional silicon-based parts. Qorvo's SiC-FET technology takes it a step further—a 750V device packed in a tiny TO-Leadless (TOLL) package.
به خواندن ادامه دهیدBlog. Read the latest RF trends, how-to articles, design tips and more from Qorvo experts. We aim to post new insights on technology development, emerging applications and topics of interest to people designing the latest and greatest technology. You can also find the latest humorous takes on the RF industry from Qorvo's own Brent …
به خواندن ادامه دهیدWide bandgap devices, such as silicon carbide (SiC), offer transistors that can sustain high power densities, but need to be offered in packages with low thermal resistances, such as the TO-247. However, connections to this package often result in high inductances. Learn how a technique called the Kelvin connection, when implemented …
به خواندن ادامه دهیدQorvo, a provider of innovative radio frequency (RF) solutions, has acquired United Silicon Carbide ( UnitedSiC ), a manufacturer of silicon carbide (SiC) power …
به خواندن ادامه دهیدUnitedSiC/Qorvo Anup Bhalla :" 1200V, 800V 。.,; RDS (on)() ...
به خواندن ادامه دهیدThe acquisition of United Silicon Carbide expands Qorvo's reach into the fast-growing markets of electric vehicles (EVs), industrial power controls, renewable energy and data center power systems. In an interview with EE Times, David Briggs, senior director of programmable power at Qorvo, and Chris Dries, former president and CEO of United ...
به خواندن ادامه دهیدRediscovering the Perfect Switch with SiC FETs. June 2, 2021. This blog post was first published by United Silicon Carbide (UnitedSiC) which joined the Qorvo family in November 2021. UnitedSiC is a leading manufacturer of silicon carbide (SiC) power semiconductors and expands Qorvo's reach into the fast-growing markets for electric …
به خواندن ادامه دهیدQorvo, United SiliconCarbide (UnitedSiC), (SiC) 。, United Silicon Carbide Qorvo (EV)、、、 ...
به خواندن ادامه دهیدRF power densities for GaN-on-SiC are 5 to 6x higher than gallium arsenide (GaAs)-based RF amplifiers. Its proven ability makes it ideal for, defense and aerospace applications such as, electronic warfare, communications, navigation and similar uses. GaN-on-SiC gives customers the flexibility to reduce board space and system costs …
به خواندن ادامه دهیدQorvo today announced a motor control reference design that features the PAC5556 intelligent motor controller with Qorvo's new silicon carbide (SiC) FETs into a …
به خواندن ادامه دهیدQorvo today announced it has successfully scaled its proprietary QGaN25 gallium nitride (GaN) on silicon carbide (SiC) process to produce monolithic microwave integrated circuits (MMICs) on six-inch wafers. The transition from 4-inch to 6-inch wafers is expected to approximately double Qorvo's GaN on SiC manufacturing capacity and …
به خواندن ادامه دهیدSiC FETs. Qorvo's high-performance silicon carbide (SiC) FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, standard thru-hole (including Kelvin) and surface mount packages, with excellent cost effectiveness. These FETs are …
به خواندن ادامه دهیدGreensboro, NC, November 3, 2021 – Qorvo ® (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, announced today that it has …
به خواندن ادامه دهیدSiC FETs. Qorvo's high-performance silicon carbide (SiC) FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, standard thru-hole (including Kelvin) and surface mount packages, with excellent cost effectiveness. These FETs are based on a unique cascode configuration where a high-performance SiC fast JFET is co ...
به خواندن ادامه دهیدOur SiC technology, together with Qorvo's complementary Programmable Power Management products and world-class supply chain capabilities, enable us to deliver superior levels of power efficiency ...
به خواندن ادامه دهیدGREENSBORO, NC and AUBURN, MI – November 2, 2022 – Qorvo ® (Nasdaq: QRVO), a leading global provider of connectivity and power solutions, and SK …
به خواندن ادامه دهیدSiC JFETs Qorvo's silicon carbide (SiC) JFETs are high-performance, normally-on JFET transistors, from 650 to 1700 V, with ultra-low on-resistance (RDS(on)) as low as 25 mohms. New Power Management Products. PAC5526. 48 V Charge Pump BLDC Motor Driver with Programmable Current. PAC5285. 40 V / 20 W BLDC Controller/Driver …
به خواندن ادامه دهیدQorvo, Inc. and Subsidiaries Annual Report on Form 10-K 2022 In this Annual Report on Form 10-K, the words "Qorvo," "we," "our," "ours" and "us" refer only to Qorvo, Inc. and its subsidiaries and not any other person or entity. The following discussion should be read in conjunction with the consolidated financial
به خواندن ادامه دهیدDelivering Big Switching Power in a Small Package with SiC FETs. New semiconductor switch tech emerges occasionally, like SiC and GaN, offering superior power efficiency and size to traditional silicon parts. Understand …
به خواندن ادامه دهیدInvestor Relations Contact: Doug DeLieto VP, Investor Relations W +1 336-678-7968: Media Contact: Brent Dietz Qorvo Director of Corporate Communications
به خواندن ادامه دهیدAbout QRVO. Qorvo, Inc. engages in development and commercialization of technologies and products for wireless, wired, and power markets. It operates through three segments: High Performance Analog (HPA), Connectivity and Sensors Group (CSG), and Advanced Cellular Group (ACG).
به خواندن ادامه دهیدDecember 1, 2020, Princeton, New Jersey— UnitedSiC [Now Qorvo], a leading manufacturer of silicon carbide (SiC) power semiconductors, has launched the first four devices based on its advanced Gen 4 SiC FET technology platform.As the first and only 750V SiC FETs currently available on the market, these Gen 4 devices enable new …
به خواندن ادامه دهیدنقل قول کردن به چه معنا است؟ نقل قول () بهمعنای کپی کردن بخشی از سخنان، نظریات و یا یافتههای اشخاص دیگر، بهمنظور اعتباربخشی به ایدههای خود است. شما میتوانید در نگارش مقالات و پایاننامههای آکادمیک خود برای ...
به خواندن ادامه دهیدThe acquisition of UnitedSiC has extended Qorvo's reach into the fast-growing markets for electric vehicles (EVs), industrial power, circuit protection, renewables and data center power. This post is a collection of blogs that provide you with a deep dive into a comprehensive understanding of silicon carbide (SiC) power semiconductors and …
به خواندن ادامه دهیدQorvoが、ニュージャージープリンストンにをくSiC(United Silicon Carbide)パワーメーカーUnitedSiCをした。QorvoはこのUnitedSiCにより、なをげている、(EV)や、エネルギー、データセンターパワーシステムなどのへ ...
به خواندن ادامه دهیدGREENSBORO, N.C., May 4, 2022 – Qorvo ® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today announced financial results for the Company's fiscal 2022 fourth quarter ended April 2, 2022. On a GAAP basis, revenue for Qorvo's fiscal 2022 fourth quarter was $1.166 billion, gross margin was 48.9%, …
به خواندن ادامه دهیدGREENSBORO, N.C., Nov. 03, 2021 (GLOBE NEWSWIRE) -- Qorvo ® (Nasdaq: QRVO), a leading provider of innovative RF solutions that connect the world, announced today that it has acquired Princeton, New Jersey-based United Silicon Carbide (UnitedSiC), a leading manufacturer of silicon carbide (SiC) power semiconductors. The acquisition of United …
به خواندن ادامه دهیدDelivering Big Switching Power in a Small Package with SiC FETs. New semiconductor switch tech emerges occasionally, like SiC and GaN, offering superior power efficiency and size to traditional silicon parts. Understand how Qorvo's SiC-FET goes beyond with a 750V device in a small TO-Leadless package, offering unique design advantages.
به خواندن ادامه دهید