- +8618437960706
- دوشنبه تا شنبه: 10:00 - 16:00 / یکشنبه تعطیل است
third edition of its SiC technology & market analysis: 'Power SiC 2017: Materials, Devices, Modules, And Applications'. End users were once simply curious about SiC, but they are now coming to try it, building prototypes for concrete projects that could drive volumes in coming years. "SiC technology's added value is today widely
به خواندن ادامه دهید
II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap semiconductors, today announced that it has qualified its 1200 V silicon carbide MOSFET platform, on its high-quality SiC substrates, to stringent automotive standard requirements and is expanding its relationship with GE by signing a three-year technology access agreement (TAA) with …
به خواندن ادامه دهید
Gate oxide reliability on silicon carbide MOSFETs and large-area SiC N-type capacitors was studied for devices fabricated on 150mm SiC substrates. Oxide lifetime was measured under accelerated ...
به خواندن ادامه دهید
50 years. In applications below 600 V, Si metal oxide semiconductor field-effect transistors (MOSFETs) based on a trench gate structure dominate the market, whereas Si super junction MOSFETs and Si insulated gate bipolar transistors (IGBTs) based on field stop and injection enhancement concepts dominate the market from 600 V to 6.5 kV.
به خواندن ادامه دهید
to the physical properties of SiC, the electric field intensity in SiC chips unavoidably tends to increase; in particular, the intensity of the electric field to be applied to the gate oxide at the trench bottom becomes high. Therefore, SiC-MOSFETs require special consideration, unlike Si trench MOSFETs. Figure 3 illustrates the
به خواندن ادامه دهید
The high value of output driving voltage VGS is 19 V to ensure the low on-resistance of SiC MOSFET, while the low value of VGS is −5 V to ensure the SiC MOSFET not be turned on mistakenly. The driving circuit also solves the the contradiction between the BJT switch speed and power dissipation of conventional HT SiC MOSFET driving circuit.
به خواندن ادامه دهید
2016 GE SiC MOSFETs: (R On @25o C / R On @150o C) 20m: /45m:, 1.7kV 75m: /145m:, 3.3kV COTSSiC . 900V/23A Si CoolMOSTM: Ea < 4J/cm2 GE12N20L SiC MOSFET: Ea >15J/cm2 >8X active area difference Tight distribution of E AV is an indication of excellent design-process robustness 1.2kV, 30A MOSFET Avalanche Ruggedness
به خواندن ادامه دهید
GE Scientists Demonstrate Ultra-High Temperature SiC MOSFET Electronics. June 1, 2023. First believed SiC MOSFETs that can operate at temperatures exceeding 800 degrees C. New temperature tolerance threshold believed to set a record for MOSFET based electronics. Could enable robust, reliable electronics to support space exploration …
به خواندن ادامه دهید
NISKAYUNA, NY – Thursday, June 1, 2023 – A team of scientists from GE Research have set a new record, demonstrating SiC MOSFETs (Metal–Oxide–Semiconductor Field-Effect Transistors) that can tolerate temperatures exceeding 800 degrees C. This at least 200 degrees C higher than previously known demonstrations of this technology and shows ...
به خواندن ادامه دهید
At GE Research, semiconductor engineers and physicists tackle the most challenging problems involved when developing commercial devices and systems by applying their expertise in semiconductor device physics, device process integration and device testing. Our researchers are focused on Silicon Carbide (SiC) devices, including MOSFETs for …
به خواندن ادامه دهید
SiC MOSFETs are no exception. Figure 2 shows that traditional Si MOSFETs show a clear transition between the linear (ohmic) and the active region (saturation). On the other hand, looking at Figure 3, SiC MOSFETs do not show this behavior and in fact, there is no saturation region, which means that a SiC MOSFET behaves more like a variable
به خواندن ادامه دهید
News: Microelectronics 2 February 2022. II-VI qualifies 1200V SiC MOSFET platform to automotive standards and expands relationship with GE. Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA has qualified its 1200V silicon carbide (SiC) MOSFET platform, on its SiC substrates, to stringent …
به خواندن ادامه دهید
GE makes SiC chips called MOSFETs - metal-oxide semiconductor field effect transistors. They help manage power inside machines and can handle temperatures as high as 200 degrees Celsius (392 Fahrenheit), where ordinary silicon would fail.
به خواندن ادامه دهید
width and on-resistivity for 6H-SiC, 3C-SiC, and Si MOSFET[10]. Table 1 shows that for a given breakdown voltage, the on-resistance of SiC MOSFET will at least 2 orders of magnitude lower than in their Si counterparts for the same blocking voltage, and SiC exhibits more excellent conduction characteristic under higher breakdown voltage.
به خواندن ادامه دهید
MOSFET with a low defect density in the channel region. The characteristics of the 3rd quadrant are given in Figure 4. As pointed out before the MOSFET contains a body diode which can be used for hard commutation. Thus, it is not necessary to add an external and expensive additional SiC diode for freewheeling operation. The curves with a
به خواندن ادامه دهید
minimize the impact of the SiC MOSFET intrinsic diode static performance. At the same time silicon MOSFETs technologies allow to achieve in a cost-effective way very low R DS(on) values in a single package, thus making highly appealing "hybrid" solutions tailored to properly mix silicon and SiC devices. In fact,
به خواندن ادامه دهید
650 V up to 2000 V CoolSiC™ MOSFET discretes ideally suited for hard- and resonant-switching topologies. Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC™ MOSFET portfolio ...
به خواندن ادامه دهید
Wide Bandgap Materials 4 Radical innovation for Power Electronics Si GaN 4H-SiC E g (eV) –Band gap 1.1 3.4 3.3 V s (cm/s) – Electron saturation velocity 1x10 72.2x10 2x107 ε r –dielectric constant 11.8 10 9.7 E c (V/cm) –Critical electric field 3x105 2.2x106 2.5x106 k (W/cm K) thermal conductivity 1.5 1.7 5 E c low on resistance E g low leakage, high Tj k …
به خواندن ادامه دهید
MOSFET：55 A、1700 V、70 mOhm（,Tj = 150 C）,N,HiP247 SCT012H90G3AG Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
به خواندن ادامه دهید
1200 V SiC MOSFET. GE Gen 3 Silicon Carbide power MOSFET offers leading efficiency and ruggedness, ease of paralleling for high current modules, and industry-first 200 °C rating. Product Details. Product Inquiry.
به خواندن ادامه دهید
Summary of Power MOSFET SEE Test Result. Heavy-ion single-event effects are studied on GE SiC power devices in this part. Previous studies on COTS SiC devices demonstrated that parts started showing single-event degradation at very low drain-source voltage (Vds) bias conditions [3-4]. Previous Work On-state resistance (Rdson) decreases
به خواندن ادامه دهید
NISKAYUNA, NY – Thursday, June 1, 2023 – A team of scientists from GE Research have set a new record, demonstrating SiC MOSFETs (Metal–Oxide–Semiconductor Field-Effect Transistors) that can tolerate temperatures exceeding 800 degrees C.
به خواندن ادامه دهید
Our researchers are focused on Silicon Carbide (SiC) devices, including MOSFETs for power conversion, transient voltage suppressors for electronic protection, solid-state photomultipliers for UV detection, switches for pulsed power applications, or integrated circuits for harsh environments, and integrated radiation detector subsystems with ...
به خواندن ادامه دهید
SiC MOSFETs capable of blocking extremely high voltages (up to 15kV); while dopant control for thin highly-doped epitaxial layers has helped enable low on-resistance 900V SiC MOSFET production. Device design and processing improvements have resulted in lower MOSFET specific on-resistance for each successive device generation.
به خواندن ادامه دهید
High performance SiC MOSFET module for industrial applications. Abstract: A novel 1.7kV, 500A low inductance half-bridge module has been developed for fast-switching SiC devices. The module has a maximum temperature rating of 175°C. There are 12 GE SiC MOSFET chips per switch and the MOSFET's body diode is utilized as the freewheeling diode.
به خواندن ادامه دهید
GE began developing SiC MOSFETs (metal-oxide semiconductor field-effect transistors) more than a decade ago and achieved the strict standards required by the automotive industry. GE has since won dozens of contracts, mostly for military applications. "Silicon carbide is superior to silicon," says Rick Eddins, an engineer at GE …
به خواندن ادامه دهید
A 4H-SiC trench MOSFET has been developed that features trench gates with a thick oxide layer on the bottoms of the trenches. The maximum electric field strength and gate-drain charge of this ...
به خواندن ادامه دهید
CB devices are expected to enable highly efficient, medium voltage, multi-mega¬watt power conversion for conventional and renewable energy applications. GE Research has already demonstrated the world's first …
به خواندن ادامه دهید
ROHM's 4 th Gen SiC MOSFETs contribute to drastic reductions in system size and power consumption in a variety of applications – including electric vehicle traction inverters and switching power supplies. For example, 6% electricity consumption reduction can be achieved over IGBT solutions by significantly improving the efficiency mainly in the high …
به خواندن ادامه دهید
A novel 1.7kV, 500A low inductance half-bridge module has been developed for fast-switching SiC devices. The module has a maximum temperature rating of 175oC. There are 12 GE SiC MOSFET chips per ...
به خواندن ادامه دهید