- +8618437960706
- دوشنبه تا شنبه: 10:00 - 16:00 / یکشنبه تعطیل است
The result is a power loss reduction by more than 50 percent and 2.5 percent higher efficiency compared to state-of-the art 1500 V silicon MOSFETs. The efficiency is 0.6 percent higher, compared to other 1700 SiC MOSFETs. The low losses enable compact SMD assembly with natural convection cooling without the need for a heatsink.
به خواندن ادامه دهید
Based on volume experience and compatibility know-how, Infineon introduces the revolutionary CoolSiC™ MOSFET technology which enables radically new product designs. In comparison to traditional Silicon-based …
به خواندن ادامه دهید
The 1700-V EliteSiC MOSFET offers a maximum Vgs range of -15 V/25 V, making it suitable for fast switching applications where gate voltages are increasing to -10 V, which provides increased system reliability, added the company. At a test condition of 1200 V at 40 A, the 1700-V EliteSiC MOSFET achieves a gate charge (Qg) of 200 nC …
به خواندن ادامه دهید
The right solution for more efficient and simplified high-power density designs. Based on the advanced, innovative properties of wide bandgap materials, silicon-carbide power …
به خواندن ادامه دهید
G2R1000MT17J – 1700V 1000mΩ TO-263-7 SiC MOSFET. G3R450MT17D – 1700V 450mΩ TO-247-3 SiC MOSFET. G3R450MT17J – 1700V 450mΩ TO-263-7 SiC MOSFET. GeneSiC's new 3300V and 1700V SiC MOSFETs, available in 1000mΩ and 450mΩ options as SMD and Through-Hole discrete packages, are highly optimized for …
به خواندن ادامه دهید
CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous …
به خواندن ادامه دهید
E-Series Automotive-Qualified Silicon Carbide MOSFETs. 650 V Discrete Silicon Carbide MOSFETs. 900 V Discrete Silicon Carbide MOSFETs. 1000 V Discrete Silicon Carbide MOSFETs. 1200 V Discrete Silicon Carbide MOSFETs. 1700 V Discrete Silicon Carbide MOSFETs. E-Series Automotive-Qualified Silicon Carbide MOSFETs.
به خواندن ادامه دهید
SCT2750NY. 1700V, 6A, SMD, Silicon-carbide (SiC) MOSFET. 1700V 6A N-channel SiC (Silicon Carbide) power MOSFET. Data Sheet Buy * Sample *. * This is a standard-grade product. For Automotive usage, please contact Sales.
به خواندن ادامه دهید
This changes with 1700V SiC MOSFETs, which allow designers to use the two-level circuit with half the device count and significantly more streamlined control. As an example, a system that previously used silicon IGBTs in a three-level circuit topology could use half (or fewer) 1700 V SiC MOSFET modules in a more reliable two-level topology. ...
به خواندن ادامه دهید
• 2nd generation SiC MOSFET technology • High blocking voltage with low On-Resistance • High speed switching with low capacitances • Resistant to latch-up • Halogen Free, ... Note (2): MOSFET can also safely operate at 0/+20V Part Number Package Marking C2M0045170DTO-247-3L. C2M0045170D 2
به خواندن ادامه دهید
The new family of 1700V M1 planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive.
به خواندن ادامه دهید
Silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) are next-generation power switching devices for high power and high blocking voltage applications. However, degradation of the on-resistance of SiC MOSFETs caused by bipolar operation has been an issue for SiC MOSFETs [1,2]. Although several studies have
به خواندن ادامه دهید
Achieve high switching frequency, minimal losses and maximum efficiency using SiC MOSFETs from leading suppliers. Silicon Carbide also offers excellent power density. ... The full Silicon Carbide power modules are available from 20A to 540A in 1200V and 1700V, with and without anti-parallel freewheeling Schottky diode. Sixpacks, half-bridges ...
به خواندن ادامه دهید
Wolfspeed C2M™ SiC Power MOSFETs are 1200V and 1700V SiC MOSFETs with extremely fast switching speeds and ultra-low switching losses designed to replace silicon transistors (IGBTs). Used in conjunction with Wolfspeed SiC Schottky diodes in an all-SiC system, the C2M SiC MOSFETs allow design engineers to achieve levels of …
به خواندن ادامه دهید
1700V 34mΩ 4H-SiC MOSFET With Retrograde Doping in Junction Field-Effect Transistor Region Abstract: In this paper, we designed and fabricated 1700V 4H-SiC MOSFETs. …
به خواندن ادامه دهید
BSM250D17P2E004 is a half bridge module consisting of SiC-DMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment. ... BSMGD2G17D24-EVK001, is a gate driver board for full SiC Modules with the 2 nd Generation 1700V SiC-MOSFET in E type housing. This evaluation board ...
به خواندن ادامه دهید
ワイド･バンドギャップのかつなにより、きわめていあたりのオンと、にほぼしない、れたスイッチングをします。. SiCのれたと、のHiP247パッケージでのにより、を ...
به خواندن ادامه دهید
Phase Leg SiC MOSFET Power Module Product Overview The MSCSM170AM45CT1AG device is a phase leg 1700 V, 64 A silicon carbide (SiC) MOSFET power module. Note: Pins 1/2, 4/5, and 7/8 must be shorted together. All ratings at TJ = 25 °C, unless otherwise specified. Caution: These devices are sensitive to electrostatic discharge.
به خواندن ادامه دهید
The NTH4L015N065SC1 SiC MOSFET device offers superior dynamic and thermal performance with stable operation at high junction temperatures. The competitive features offered by the 650V NTH4L015N065SC1 device compared to SiC MOSFET in the same range are as follows: Lowest ON resistance: Typical RDS (on) = 12 m @ VGS = …
به خواندن ادامه دهید
The specific on-state resistance of 1700V SiC MOSFET is reduced by nearly 82% as compared to 2000V Si MOSFET counterpart. This will greatly reduce the conduction losses and semiconductor costs while improving the power density and of application. Additionally, the low switching energy and ultra-low gate charge of the SiC MOSFETs …
به خواندن ادامه دهید
Power MOSFETs and Small-Signal MOSFETs. Power Switch ICs. Reverse Power Feed (RPF) Silicon Carbide (SiC) Devices. Silicon Carbide (SiC) Gate Drivers; Silicon Carbide (SiC) Die; Silicon Carbide (SiC) Discretes; Silicon Carbide (SiC) Modules; Transient Voltage Suppressors. Voltage Supervisors and References. Electromechanical Power Relays
به خواندن ادامه دهید
Use SiC-Based MOSFETs to Improve Power Conversion Efficiency: EDA Models: C2M0045170P by Ultra Librarian: Environmental & Export Classifications. Attribute ... MOSFET SIC 1700V 35 MOHM TO-247-Microchip Technology. $41.80000. Details. C3M0021120K. SICFET N-CH 1200V 100A TO247-4L. Wolfspeed, Inc. $37.30000. Details.
به خواندن ادامه دهید
Wolfspeed 1700 V Silicon Carbide (SiC) MOSFETs enable smaller and more efficient power conversion systems. Compared to silicon-based solutions; Wolfspeed Silicon Carbide technology enables increased …
به خواندن ادامه دهید
Silicon Carbide (SiC) MOSFET new family, 1700V M1 planar EliteSiC MOSFET is optimized for fast switching applications. Planar technology works reliably with negative gate …
به خواندن ادامه دهید
SCT1000N170AG. Active. Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package. Download datasheet. Overview. Sample & Buy. …
به خواندن ادامه دهید
The SiC Trench MOSFETs offer a 12V/0V gate-source voltage compatible with most fly-back controllers. In addition, the CoolSiC 1700V SiC Trench MOSFETs can be directly driven from a fly-back …
به خواندن ادامه دهید
CoolSiC trench technology features lowest device capacitances and gate charges for transistors of this voltage class. The result is a power loss reduction by more than 50 percent and 2.5 percent higher efficiency compared to state-of-the art 1500 V silicon MOSFETs. The efficiency is 0.6 percent higher, compared to other 1700 SiC MOSFETs.
به خواندن ادامه دهید
1700V, 1Ω, TO-247-3L SiC MOSFET H1M170F1K0 Device Datasheet H1M170F1K0 Rev. Preliminary 0.2 Jul. 2021 Typical Device Performance Fig.19 Schematic of Resistive Switching Fig.20 Switching Times Definition Fig.21 Transient Junction to Case Thermal Impedance Naming Rule H1 M 170 F 1K0 Generation H1 = 1st Gen Discrete Device …
به خواندن ادامه دهید
Wolfspeed C2M™ SiC Power MOSFETs are 1200V and 1700V SiC MOSFETs with extremely fast switching speeds and ultra-low switching losses designed to replace silicon transistors (IGBTs). Used in conjunction with Wolfspeed SiC Schottky diodes in an all-SiC system, the C2M SiC MOSFETs allow design engineers to achieve levels of …
به خواندن ادامه دهید
1700V G2-Version. Low power dissipation by side-gate HiGT. Low noise & easy drive through low Cies and Cres. Package. Type Name. (Update) IC (A) Feature. Status *1.
به خواندن ادامه دهید