- +8618437960706
- دوشنبه تا شنبه: 10:00 - 16:00 / یکشنبه تعطیل است
High-density packaging of high voltage semiconductors, such as 10kV SiC MOSFETs, has brought additional challenge. This work proposes a wire-bond-less, highly integrated planar SiC half-bridge ...
به خواندن ادامه دهید
500 kW SiC Mosfet based drive For the same 4.16 kV, 500 kW drive system, using 10 kV/120A SiC-Mosfet, it is possible to have a 2-level topology. The SiC devices can be switched at 5 kHz, for 69A rms (98A peak) current, and a single device can withstand the forward blocking voltage of Vdc = 6kV. SiC MOSFET kV rating? 10kV, 12kV, 15kV
به خواندن ادامه دهید
Fig. 1: Three phase converter enabled by 10kV SiC MOSFETs to be designed to ensure safe operation during switching. The high di/dt introduces voltage surge on the device during
به خواندن ادامه دهید
Ten-kilovolt SiC MOSFETs are currently under development by a number of organizations in the United States, with the aim of enabling their applications in high …
به خواندن ادامه دهید
1. I agree, it is quite complicated to get a good voltage distribution across all MOSFETs during turn-on and turn-off. Furthermore 10 kV is high voltage and one needs to be extremely careful with such voltage levels, which can be deadly. – Ken Grimes.
به خواندن ادامه دهید
Abstract: This paper presents the characterization of the temperature-dependent short-circuit performance of a Gen3 10 kV/20 A silicon carbide (SiC) mosfet. The test platform consisting of a phase-leg configuration and a fast speed 10-kV solid state circuit breaker, with temperature control, is introduced in detail.
به خواندن ادامه دهید
The total module footprint is 35.2 mm × 74.3 mm × 11.4 mm without the housing, giving a power density of 18.1 W/mm 3. For reference, the power density of Wolfspeed s 10 kV, 240 A SiC MOSFET module is 4.2 W/mm 3, including the housing. According to ANSYS Q3D Extractor, the gate-loop inductance for each MOSFET die is 3.8 nH.
به خواندن ادامه دهید
•Boost-buck at 3.75kW for 30 min - Switching test of 10kV SiC MOSFET at 5kV •Boost input is 1.25kV and output is 5kV. The boost duty is 25% • 30 min thermal run at 5kV and 3.75 …
به خواندن ادامه دهید
S.I.C Device. James McBryde, Arun Kadavelugu, Bobby Compton, Subhashish Bhattacharya, Mrinal Das, Anant Agarwal," Performance comparison of 1200V Silicon and SiC devices for UPS application ",IECON 2010 – 36th Annual Conference on IEEE Industrial Electronics Society,2010. Gangyao Wang,Xing Huang, Jun Wang, Tiefu Zhao, …
به خواندن ادامه دهید
The characterization of soft-switching losses of modern high-voltage SiC MOSFETs is a difficult but necessary task in order to provide a sound basis for the accurate modelling of converter systems ...
به خواندن ادامه دهید
Body diode of a 10kV, 10A 4H-SiC MOSFET and 10kV, 10A 4H-SiC JBS diode, shown in Fig. 4, are subjected to the double pulse test to measure the diode switching loss.
به خواندن ادامه دهید
High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and low parasitic inductance. High-density packaging of high voltage semiconductors, such as 10kV SiC MOSFETs, has brought additional challenge. This work proposes a wire-bond-less, highly integrated planar SiC half-bridge module, with …
به خواندن ادامه دهید
10kV, 10A SiC MOSFET DC bus capacitor bank Inductor (6.9mH) (b) Fig. 4: Photograph of (a) 10kV, 10A 4H-SiC MOSFET die in a package without isolated base plate, and (b) the UIS test hardware setup. IV. EXPERIMENTAL RESULTS Fig. 4(a) shows the photograph of the 10kV SiC MOSFET. Its package does not have isolated base plate,
به خواندن ادامه دهید
Voltage 7kV / 400V 10kV / 340V 6kV / 400V Frequency 48kHz 37kHz 40kHz Switches HV SiC HV SiC HV SiC Density 3.8kW/dm3 1.5kW/dm3 n/a Efficiency 99.0% 97.3% 97.4% [Wang, IEEE JESTPE, 2017] [Zhu, APEC, 2018] [Rothmund, IEEE JESTPE, 2018] NCSU 20kW ETHZ 25kW Efficiency Similar sw. frequency ≠ similar performance
به خواندن ادامه دهید
(a) Schematic for the half-bridge module, (b) bottom stacked DBAs with six 10 kV SiC MOSFET die and Mo posts, (c) module with the top DBA stack and embedded decoupling capacitors attached, (d ...
به خواندن ادامه دهید
Gen3 10kV/350mOhm SiC MOSFET: Bare die: $750 each: 10kV/15A SiC JBS diode. $300 each. Quant. Part Number: Description: Package: COST: Data Sheet 2: 100: XPW3-10000-Z015B: 10kV/15A SiC JBS diode: Bare die: $300 each: Pages. Contact Us; Engineering Samples Device Bank; FAQ Sheet; Home; PowerAmerica Device Use Agreements;
به خواندن ادامه دهید
The body diodes of 10kV SiC MOSFETs can be used as anti-parallel diodes in medium voltage converters instead of widely used SiC JBS and PiN diodes. Characterization of switching loss of the body diodes is required to evaluate its candidature for replacement of JBS/PiN diodes. Normally, double pulse test setup is used to observe the reverse …
به خواندن ادامه دهید
consists of a split DC-link and a 10kV SiC MOSFET-based half-bridge on the MV-side, a 52 : 6 MF transformer providing the galvanic isolation, and a 1200V SiC MOSFET-based full-bridge on the LV-side. The half-bridge configuration is selected 10kV SiC 1.2kV SiC U DC,MV n=52:6 L C r i L h i MV LV S 1 S 2 11 S 12 21 S 22 C 1 C 2 C 3 u MV LV (a) MV ...
به خواندن ادامه دهید
In [45], a novel 10 kV, 60 A all SiC power module prototype was manufactured using third Generation Wolfspeed 350 mΩ SiC MOSFETs. Pressure-assisted sintering was used for the die atachment …
به خواندن ادامه دهید
MOSFETs or IGBTs are no longer suitable for 10kV SiC MOSFET, since the higher input voltage makes the auxiliary circuit design more difficult. Consequently, the
به خواندن ادامه دهید
Munk-Nielsen, "Reduction of parasitic capacitance in 10 kV SiC MOSFET power modules using 3D FEM," 2017 19th European Confer ence on Power Electr onics and Applications (EPE'17 ECCE Europe), W ...
به خواندن ادامه دهید
Figure 3 Gate-source threshold voltage range of SiC MOSFET The minimum gate-source threshold voltage V gs(th) of other SiC MOSFET devices can be lower than 2 V at 25°C in some cases. Therefore, minor ground bouncing can lead to an uncontrolled turn-on of the MOSFET when using an off-state voltage of zero Volts.
به خواندن ادامه دهید
In the hardware design of battery energy storage system (BESS) interface, in order to meet the high-voltage requirement of grid side, integrating 10-kV silicon-carbide (SiC) MOSFET into the interface could simplify the topology by reducing the component count.
به خواندن ادامه دهید
The emergence of medium-voltage silicon carbide (SiC) power semiconductor devices, in ranges of 10–15 kV, has led to the development of simple two-level converter systems for medium-voltage applications. A medium-voltage mobile utility support equipment-based three-phase solid state transformer (MUSE-SST) system, based on Gen3 10 kV SiC …
به خواندن ادامه دهید
The circuit uses only two high-voltage switches synthesized by means of the 10 kV SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor). ... notably the 10kV SiC MOSFETs and diodes, as presented in Section 3. The experimental setup, performance analysis, notably through a power balance, and results are discussed in …
به خواندن ادامه دهید
Abstract: Advanced high-voltage (10 kV-15 kV) silicon carbide (SiC) power MOSFETs described in this paper have the potential to significantly impact the system performance, …
به خواندن ادامه دهید
1.2kV & 10kV SiC MOSFETs Developed ... 100A SiC MOSFET/ SiC Schottky Half H-Bridge Module. D1. S1D2. S2. D1 Termnali S1D2 Termnali S2 Termnali D1 S2 S1D2 G1 G2 S1p S2p Cree 1.2kV, 20A SCi MOSFET Cree 1.2kV, 50A SiC JBS Diode. 1.2kV, 100A SiC MOSFET Module: Avg Vds vs Ids Vgs = 20V. 0.00
به خواندن ادامه دهید
eighteen 10 kV SiC MOSFET die in parallel per switch position to achieve a total module current rating of 240 A [15]. Thus far, characterization has been shown for the module
به خواندن ادامه دهید
Phase II is developing 100 A, 10 kV SiC power modules – Phase III goal is 13.8 kV 2.7 MVA Solid State Power Substation • Circuit simulation used to – Optimize SiC module and system – Evaluate impact of new technology on grid power converters • SECA goal of $40-$100 / kW for the fuel cell plant – High-Voltage grid-connected inverter ...
به خواندن ادامه دهید
MOSFETs in the 6.5KV-10KV range are now emerging as module-based products. It has been amply demonstrated that SiC MOSFETs offer dramatic loss reductions relative to silicon IGBTs above 3.3KV. For 10-25KV voltage SiC IGBTs, challenges of carrier lifetime enhancement and control, growth of ultra-thick epitaxial layers, device reliability …
به خواندن ادامه دهید