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به خواندن ادامه دهیدII-VI licenses GE's SiC power electronics technology Tags: II-VI Inc SiC substrates SiC epitaxy Visit: Substrate output to reach 1 million 150mm …
به خواندن ادامه دهیدNews: Suppliers 6 October 2020. II-VI completes Ascatron and INNOViON acquisitions, and joins SIA. Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA – which manufactures silicon carbide (SiC) substrates – says that Sohail Khan has joined it as executive VP of New Ventures & Wide-Bandgap Electronics Technologies.
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به خواندن ادامه دهیدSeptember 8, 2022 I PDF II-VI Incorporated (Nasdaq: IIVI), a leader in engineered materials and optoelectronic components, today announced a corporate name change to Coherent Corp. (Nasdaq: COHR) and a new brand identity, following the successful completion of II-VI's acquisition of Coherent, Inc., on July 1, 2022. "We chose the name Coherent …
به خواندن ادامه دهیدII-VI Incorporated is now Coherent Corp. We chose the name Coherent because of its meaning: bringing things together. This new company name and identity represents our unity in action, clarity of purpose, and broader sense of engagement with our customers. Coherent empowers market innovators through our breakthrough products and …
به خواندن ادامه دهیدLow stray inductance (1 nH) SiC die qualified to +200 °C. Ultra-low switching losses over entire operating range. Body diode with minimal reverse recovery. Integrated temperature sensing. Dedicated DESAT Pin and Source- Kelvin Pin. AlSiC Baseplate and Si3N4 AMB Substrate. Share This.
به خواندن ادامه دهیدTo meet the market demand in Asia, II-VI established in 2021 a backend processing line for SiC substrates, in over 50,000 sq. ft. of new cleanroom space, at II-VI's Asia Regional Headquarters in Fuzhou, China. Tianyu will benefit from II-VI's 150 mm SiC global production capacity in both the U.S. and in China.
به خواندن ادامه دهیدSiC achieves superior efficiency, higher energy density, and lower system-level cost per watt compared with state-of-the-art silicon-based devices. Power electronics based on SiC have demonstrated their potential to have a highly beneficial impact on the environment via significant reductions in carbon dioxide emissions and energy …
به خواندن ادامه دهیدPITTSBURGH, March 07, 2022 (GLOBE NEWSWIRE) -- II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap semiconductors, today announced that it is …
به خواندن ادامه دهیدThe key advantages of SiC-based technology include reduced switching losses, higher power density, better heat dissipation, and increased bandwidth capability. ... October 10, 2019: II-VI Incorporated Unveils the World's First 200 mm Semi-Insulating SiC Substrates for RF Power Amplifiers in 5G Antennas. Product Details Datasheet and Documents
به خواندن ادامه دهیدII-VI also announced a large-scale investment in SiC. On the 10th, II-VI announced its investment of $1 billion (about KRW 1.16 trillion) in SiC over the next 10 years. The company plans to increase its SiC wafer …
به خواندن ادامه دهیدII-VI Incorporated, a global leader in engineered materials and optoelectronic components, is a vertically integrated manufacturing company that develops innovative products for diversified applications in communications, industrial, aerospace & defense, semiconductor capital equipment, life sciences, consumer electronics, and automotive ...
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به خواندن ادامه دهیدII‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap semiconductors, today announced that it has qualified its 1200 V silicon carbide MOSFET platform, on its high-quality SiC substrates, to stringent automotive standard requirements and is expanding its relationship with GE by signing a three-year technology access agreement (TAA) with …
به خواندن ادامه دهیدNews: Suppliers 8 March 2022. II-VI accelerates 150-200mm SiC substrate and epi manufacturing expansion. As part of its previously announced $1bn investment in silicon carbide (SiC) over the next 10 years, engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA is accelerating its investment in …
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به خواندن ادامه دهیدDetails the previously announced $1 billion investment in silicon carbide (SiC) over the next 10 yearsPennsylvania site's annual output of 150 mm and 200 mm SiC substrates to reach the ...
به خواندن ادامه دهیدII-VI and Infineon will also collaborate in the transition to 200 mm SiC substrates. II-VI announced in March 2022 that it is accelerating its investment in 150 mm and 200 mm SiC substrate ...
به خواندن ادامه دهیدAdditional Key Properties of II-VI Advanced Materials SiC Substrates (typical values*) Parameter Polytype Dopant Resistivity Orientation FWHM Roughness, Ra** Dislocation density Micropipe density N-type 4H Nitrogen ~0.02 Ohm-cm 4° off-axis < 20 arc-sec <5Å ~ 3·103 cm-2 < 0.1 cm -2 Semi-insulating 4H, 6H Vanadium > 10 11 Ohm-cm On-axis < 25 ...
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به خواندن ادامه دهیدMotivated to reduce carbon-dioxide emissions, many countries across the globe are sponsoring while others have already passed legislation to require or provide incentive …
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به خواندن ادامه دهیدPITTSBURGH and SANTA CLARA, CALIF., July 1, 2022 (GLOBE NEWSWIRE) – II‐VI Incorporated (Nasdaq: IIVI) today successfully completed the acquisition of Coherent, Inc. (Nasdaq: COHR), forming a global leader in materials, networking, and lasers. Under the terms of the merger agreement, each share of …
به خواندن ادامه دهیدII-VI Infrared Laser (Suzhou) Co., Ltd. Block D01~02 No.5 Xing Han St. Suzhou Industrial Park 215021 CHINA [email protected] . Application Labs. Highyag Lasertechnologie GmbH Hermann-von-Helmholtz-Str. 2 14532 Kleinmachnow GERMANY. Highyag Lasertechnologie, Inc. 70701 Powell Road
به خواندن ادامه دهیدNews: Microelectronics 7 July 2020. II-VI relying on GE's IP to conquer power SiC markets. As announced at the end of June, engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA – which manufactures silicon carbide (SiC) substrates – has licensed SiC technology from General Electric with a view to …
به خواندن ادامه دهیدPITTSBURGH, April 15, 2021 (GLOBE NEWSWIRE) -- II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap compound semiconductors, today announced …
به خواندن ادامه دهیدTo meet the accelerating global demand for SiC power electronics, II-VI will significantly build out its nearly 300,000 square foot factory in Easton, to scale up the production of its state-of-the-art 150 mm and 200 mm SiC substrates and epitaxial wafers. Easton's 150 mm and 200 mm SiC substrate output is expected to reach the equivalent …
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