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4H-SiC Split-Gate Octagonal MOSFET Kijeong Han and B. J. Baliga, Life Fellow, IEEE Abstract—A 1.2 kV rated 4H-SiC Split-Gate Octagonal cell MOSFET (SG-OCTFET) is proposed and successfully fabricated in a 6-inch foundry for the first time. The measured results quantify the benefits of the SG-OCTFET structure: improvement
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The channel conduction in 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering still plays a crucial role in increasing the channel resistance in these transistors. In this work, the …
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the V-groove SiC MOSFET with the p-type buried struc-ture and inspect the utility in power electronic converter use. 2. Structure and Fabrication of MOS Devices Figure 1 shows the schematic cross-sectional view of the 4H-SiC trench MOSFET with p+ buried region below the trench bottom. The SiC epitaxial layer was grown on 4˚off-axis n-type 4H ...
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Due to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs …
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4H- and 6H- Silicon Carbide in Power MOSFET Design By Md Hasanuzzaman …
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The characteristics of 4H-SiC NMOSFET and PMOSFET are presented from 25 °C to 500 °C. The related integrated circuits based on 4H-SiC MOSFETs have been fabricated. The gain of the 4H-SiC common-source amplifier is 37 dB and 32 dB at 25 °C and 300 °C. The gain of the 4H-SiC differential amplifier is 30 dB and 34.6 dB at 25 °C …
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In this paper, a two-dimensional (2D) planar scanning capacitance microscopy (SCM) method is used to visualize with a high spatial resolution the channel region of large-area 4H-SiC power MOSFETs and estimate the homogeneity of the channel length over the whole device perimeter. The method enabled visualizing the fluctuations …
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Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science …
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The performance and reliability of the state-of-the-art power 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) are affected by electrically active defects at and near the interface between SiC and the gate dielectric. Specifically, these defects impact the channel-carrier mobility and threshold voltage of SiC …
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In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics. In addition, a 2D numerical simulator (ATLAS) is used to investigate the electrical characteristics of the devices. The investigational results have demonstrated that the …
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In this paper, a 650 V 4H-SiC trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a hetero-junction diode (HJD) and double current spreading layers (CSLs) is proposed and studied based on Sentaurus TCAD simulation. The HJD suppresses the turn-on of the parasitic body diode and improves the performance in the …
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At present, the high-temperature applications of 4H-SiC MOSFETs develop towards 300 C.[11,12] However, the off-state negative V gs dependence of th,sub in 4H-SiC MOSFET at 300 C has not been studied.[5,13–16] On the other hand, the DV th,sub of 4H-SiC MOSFET could be caused by the interface traps or oxide traps in channel region.[6,17] As we ...
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A 1.2 kV trench gate SiC MOSFET with a low switching loss was developed by Fiji Electric . The proposed device exhibits a 48% reduction in on-resistance, with a higher threshold voltage than the conventional SiC planar MOSFET. A 4H-SiC Planar MOSFET with a blocking voltage of 2.3 kV was proposed 2 . The fabricated device …
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In this study, we investigated a 4H-SiC deep source trench metal-oxide semiconductor field-effect transistor (DST-MOSFET) using technology computer-aided design numerical simulations. The proposed DST-MOSFET comprises a P-pillar formed along with the DST and a side P+ shielding region (SPR), which replaces the gate trench …
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SiC。 02. . MOSFET,,X-FAB 6,6μmn+。 1：(a) (b)600V 4H-SiCMOSFET ...
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1 Introduction. Even though SiC planar metal–oxide–semiconductor field-effect transistors (MOSFETs) are commercialised, the higher specific on-resistance – is a confining factor for the device due to scattering at SiC–SiO 2 interface leading to lower channel mobility. Trench MOSFETs such as CoolSiC from Infineon have been …
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band gap silicon carbide (SiC) semiconductors has begun to improve the performance and reduce the loss. Thanks to the excellent physical properties of SiC, SiC ... et al.: High Performance 4H-SiC MOSFETs with Optimum Design of Active Cell and Re-oxidation Process, PCIM Europe, 879–884 (2018) (2) Y. Fukui., et al.: Effects of Grounding Bottom ...
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Dod-cell and Oct-cell MOSFETs in this work are shown in Figure1c. All MOSFETs have the same edge termination design and die size. The die size is 1.15 1.15 mm2, including the termination. The MOSFETs are fabricated on a 6-inch SiC wafer by X-Fab using the same SiC power MOSFET process. Figure1d shows the cross-sectional …
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In this study, we investigated a 4H-SiC deep source trench metal-oxide …
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4H-SiC Power MOSFETs Tianshi Liu, Shengnan Zhu, Susanna Yu, Diang Xing, Arash Salemi, Minseok Kang, Kristen Booth, Marvin H. White, and Anant K. Agarwal Department of Electrical and Computer Engineering The Ohio State University Columbus, USA 614-6200105, [email protected] Abstract—This work examines the gate oxide ruggedness and
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The state-of-the-art 4H-SiC MOSFETs still suffer from performance (low channel-carrier mobility and high threshold voltage) and reliability (threshold voltage instability) issues. These issues have been attributed to a large density of electrically active defects that exist in the SiO 2 –SiC interfacial region. This paper reviews the earlier ...
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SiC exists in a variety of polymorphic crystalline structures called polytypes e.g., 3C-SiC, 6H-SiC, 4H-SiC. Presently 4H-SiC is generally preferred in practical power device manufacturing. Single-crystal 4H-SiC wafers of 3 inches to 6 inches in diameter are commercially available. Properties Si 4H-SiC GaAs GaN
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This article investigates an improved 4H-SiC trench gate metal–oxide–semiconductor field-effect transistor (MOSFET) (UMOSFET) fitted with a super-junction (SJ) shielded region. The modified structure is composed of two n-type conductive pillars, three p-type conductive pillars, an oxide trench under the gate, and a …
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The effects of carrier trapping at the SiC–SiO 2 interface on the electrical characteristics in 4H-SiC MOSFETs have been critically reviewed in this paper. Based on a review of the current literature, it is generally accepted that a large density of traps energetically located near the 4H-SiC conduction band edge is responsible for the severe ...
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2.1. Crystal and band structures. SiC is a IV–IV compound semiconductor, where only a rigid stoichiometry (Si:C=1:1) is allowed. The large SiC bond energy (about 4.6 eV) gives this material a wide bandgap, high critical electric field strength, and high phonon energies [1], [2], [3].Compared with other wide bandgap semiconductors such as III …
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3 Fig. 2. Comparison of (a) the firs and (b) third quadrant behaviors of the fabricated JBSFET and MOSFET. The JBSFET was annealed at 900°C for 2 minutes while the MOSFET was annealed at 950°C for 2 minutes.
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Abstract: In this paper, a 4H-SiC DMOSFET with a source-contacted dummy gate (DG …
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this paper, we compare the two MOS based UHV 4H-SiC power switching devices; 15kV 4H-SiC MOSFETs and 15kV 4H-SiC n-IGBTs. The 15kV 4H-SiC MOSFET shows a specific on-resistance of 204mΩcm2 at 25°C, which increased to 570mΩcm2 at 150°C. The 15kV 4H-SiC MOSFET provides low, temperature-independent, switching losses which …
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This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static characteristics of the traditional vertical MOSFET, DC-FSJ MOSFET …
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